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Corsair CML8GX3M2A1600C9 4GB
Corsair CMD32GX4M2C3200C14M 16GB

Corsair CML8GX3M2A1600C9 4GB vs Corsair CMD32GX4M2C3200C14M 16GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Corsair CMD32GX4M2C3200C14M 16GB

Corsair CMD32GX4M2C3200C14M 16GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Corsair CMD32GX4M2C3200C14M 16GB 需要考虑的原因
Corsair CMD32GX4M2C3200C14M 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 39
    左右 -117% 更低的延时
  • 更快的读取速度，GB/s
    21.3 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.9 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Corsair CMD32GX4M2C3200C14M 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 18
  • 读取速度，GB/s
    14.6 left arrow 21.3
  • 写入速度，GB/s
    8.8 left arrow 16.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 3836

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Corsair CMD32GX4M2C3200C14M 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMD32GX4M2C3200C14M 16GB
Corsair CMD32GX4M2C3200C14M 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMN32GX4M2Z3600C16 16GB
Corsair CMN32GX4M2Z3600C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 99U5625-015.A00G 16GB
Kingston 99U5625-015.A00G 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CMT16GX4M2K3600C16 8GB
Corsair CMT16GX4M2K3600C16 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Samsung M378A1K43DB2-CVF 8GB
Samsung M378A1K43DB2-CVF 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Panram International Corporation D4U2666P-8G 8GB
Panram International Corporation D4U2666P-8G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK32GX4M4A2666C16 8GB
Corsair CMK32GX4M4A2666C16 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM