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Corsair CML8GX3M2A1600C9 4GB
Corsair CMSX64GX4M4A2666C18 16GB
比较
Corsair CML8GX3M2A1600C9 4GB vs Corsair CMSX64GX4M4A2666C18 16GB
总分
Corsair CML8GX3M2A1600C9 4GB
总分
Corsair CMSX64GX4M4A2666C18 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
需要考虑的原因
Corsair CMSX64GX4M4A2666C18 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
39
左右 -63% 更低的延时
更快的读取速度,GB/s
16.6
14.6
测试中的平均数值
更快的写入速度,GB/s
14.0
8.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Corsair CMSX64GX4M4A2666C18 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
24
读取速度,GB/s
14.6
16.6
写入速度,GB/s
8.8
14.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2355
3209
Corsair CML8GX3M2A1600C9 4GB RAM的比较
G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMSX64GX4M4A2666C18 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673EH1-CF8 2GB
Kingston 9905630-048.A00G 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Samsung M393A1G40DB0-B`B 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited KD4AGU880-32A160T 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Crucial Technology BL16G36C16U4RL.M16FE 16GB
SK Hynix HMT425S6AFR6A-PB 2GB
Apacer Technology 76.B305G.D500B 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMK16GX4M2C3333C16 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Ramaxel Technology RMR5040ED58E9W1600 4GB
Samsung M378A1K43EB2-CVF 8GB
Kingston 9905403-090.A01LF 4GB
Corsair CMW64GX4M8C3000C15 8GB
Samsung M471B5273DH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Strontium SRP2G86U1-S6M 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
报告一个错误
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Bug description
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