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Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
比较
Corsair CML8GX3M2A1600C9 4GB vs Crucial Technology CT4G4SFS624A.C4FB 4GB
总分
Corsair CML8GX3M2A1600C9 4GB
总分
Crucial Technology CT4G4SFS624A.C4FB 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
低于PassMark测试中的延时,ns
39
84
左右 54% 更低的延时
更快的写入速度,GB/s
8.8
6.8
测试中的平均数值
需要考虑的原因
Crucial Technology CT4G4SFS624A.C4FB 4GB
报告一个错误
更快的读取速度,GB/s
14.8
14.6
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
84
读取速度,GB/s
14.6
14.8
写入速度,GB/s
8.8
6.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2355
1574
Corsair CML8GX3M2A1600C9 4GB RAM的比较
G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT4G4SFS624A.C4FB 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-007.A00LF 4GB
Transcend Information JM3200HLG-8G 8GB
AMD R5S38G1601U2S 8GB
AMD R744G2133U1S 4GB
Samsung M391B5673FH0-CH9 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
Samsung M4 70T5663CZ3-CE6 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KMKYF9-MID 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMD16GX4M2B3200C16 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Samsung M378B5273CH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-2400C16-16GRS 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Golden Empire CL18-20-20 D4-3600 8GB
报告一个错误
×
Bug description
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