Corsair CML8GX3M2A1600C9 4GB vs G Skill Intl F4-3600C14-16GVKA 16GB

总分

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分

G Skill Intl F4-3600C14-16GVKA 16GB

G Skill Intl F4-3600C14-16GVKA 16GB

差异规格评论

差异

Corsair CML8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB

报告一个错误

G Skill Intl F4-3600C14-16GVKA 16GB

需要考虑的原因
G Skill Intl F4-3600C14-16GVKA 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 -44% 更低的延时
更快的读取速度，GB/s

23.7 14.6

测试中的平均数值
更快的写入速度，GB/s

19.7 8.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1600C9 4GB

G Skill Intl F4-3600C14-16GVKA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 27
读取速度，GB/s

14.6 23.7
写入速度，GB/s

8.8 19.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2355 4243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology ADOVE1A0834E 1GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Samsung M471B5173EB0-YK0 4GB

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Kingston CBD26D4U9S8ME-8 8GB

Kingston CBD26D4U9S8ME-8 8GB

Kingston HP16D3LS1KBGH/4G 4GB

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Kingston 9905624-046.A00G 8GB

Kingston 9905624-046.A00G 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905700-047.A00G 16GB

Kingston 9905700-047.A00G 16GB

Corsair CML8GX3M2A1866C9 4GB

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Corsair CMV4GX4M1A2666C18 4GB

Corsair CMV4GX4M1A2666C18 4GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB