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Corsair CML8GX3M2A1600C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Corsair CML8GX3M2A1600C9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 39
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 25
  • 读取速度，GB/s
    14.6 left arrow 15.3
  • 写入速度，GB/s
    8.8 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 2704

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB RAM的比较

Kingston 99U5428-040.A00LF 4GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
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