RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Corsair CML8GX3M2A1600C9 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB

Corsair CML8GX3M2A1600C9 4GB vs Mushkin MR[ABC]4U360JNNM16G 16GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Mushkin MR[ABC]4U360JNNM16G 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Mushkin MR[ABC]4U360JNNM16G 16GB 需要考虑的原因
Mushkin MR[ABC]4U360JNNM16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.5 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 28
  • 读取速度，GB/s
    14.6 left arrow 16.5
  • 写入速度，GB/s
    8.8 left arrow 16.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 3634

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Mushkin MR[ABC]4U360JNNM16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Mushkin MR[ABC]4U360JNNM16G 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9965600-012.A01G 16GB
Kingston 9965600-012.A01G 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-2133C15-8GVR 8GB
G Skill Intl F4-2133C15-8GVR 8GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK64GX4M8X4133C19 8GB
Corsair CMK64GX4M8X4133C19 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-2666C18-4GRS 4GB
G Skill Intl F4-2666C18-4GRS 4GB
内存RAM
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Corsair CMW16GX4M2C3600C18 8GB
Corsair CMW16GX4M2C3600C18 8GB
内存RAM