Corsair CML8GX3M2A1866C9 4GB vs Micron Technology 8ATF51264AZ-2G1AY 4GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

更快的读取速度，GB/s

14.1 13.8

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1AY 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1AY 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 -36% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 28
读取速度，GB/s

14.1 13.8
写入速度，GB/s

8.7 8.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2228 2443

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M471B5273DH0-CK0 4GB

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Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

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Kingston 9965525-155.A00LF 8GB

Corsair CMG32GX4M2D3600C18 16GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

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Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB