Golden Empire 1GB DDR2 800 CAS=4 1GB vs SK Hynix HMA82GS6DJR8N-VK 16GB

总分

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分

SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB

差异规格评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB

需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值
更快的写入速度，GB/s

2,066.5 12.2

测试中的平均数值

SK Hynix HMA82GS6DJR8N-VK 16GB

需要考虑的原因
SK Hynix HMA82GS6DJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 49

左右 -32% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Golden Empire 1GB DDR2 800 CAS=4 1GB

SK Hynix HMA82GS6DJR8N-VK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 37
读取速度，GB/s

4,577.1 15.1
写入速度，GB/s

2,066.5 12.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

737 2873

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. DDR4 2666 8GB

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Micron Technology 8ATF1G64HZ-2G1A1 8GB

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Kingston 99U5701-003.A00G 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston X0N6VG-HYD2 16GB

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Crucial Technology CT16G4SFD8213.M16FB 16GB

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Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB