Corsair CMSO4GX3M1A1600C11 4GB vs INTENSO 5641160 8GB

总分

Corsair CMSO4GX3M1A1600C11 4GB

Corsair CMSO4GX3M1A1600C11 4GB

总分

INTENSO 5641160 8GB

INTENSO 5641160 8GB

差异规格评论

差异

Corsair CMSO4GX3M1A1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1A1600C11 4GB

报告一个错误

INTENSO 5641160 8GB

需要考虑的原因
INTENSO 5641160 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 31

左右 -35% 更低的延时
更快的读取速度，GB/s

16.1 11.1

测试中的平均数值
更快的写入速度，GB/s

10.2 6.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1A1600C11 4GB

INTENSO 5641160 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 23
读取速度，GB/s

11.1 16.1
写入速度，GB/s

6.9 10.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1829 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4W.M8FE1 8GB

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Kingston 9905701-032.A00G 16GB

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Avant Technology F641GU67F9333G 8GB

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A-DATA Technology ADOVE1A0834E 1GB

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Nanya Technology NT1GT64U8HB0BN-3C 1GB

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Corsair CMSO4GX3M1A1600C11 4GB

Corsair CMSO4GX3M1A1600C11 4GB

INTENSO 5641160 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Kingmax Semiconductor GSAH22F-18---------- 16GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Kingston HP26D4S9S8HJ-8 8GB