Elpida EBJ10UE8BAFA-AE-E 1GB vs Kingston KHX3200C16D4/4GX 4GB

总分

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

总分

Kingston KHX3200C16D4/4GX 4GB

Kingston KHX3200C16D4/4GX 4GB

差异规格评论

差异

Elpida EBJ10UE8BAFA-AE-E 1GB

需要考虑的原因
Elpida EBJ10UE8BAFA-AE-E 1GB

报告一个错误

Kingston KHX3200C16D4/4GX 4GB

需要考虑的原因
Kingston KHX3200C16D4/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 65

左右 -110% 更低的延时
更快的读取速度，GB/s

17.3 6.1

测试中的平均数值
更快的写入速度，GB/s

14.0 4.2

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Elpida EBJ10UE8BAFA-AE-E 1GB

Kingston KHX3200C16D4/4GX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

65 31
读取速度，GB/s

6.1 17.3
写入速度，GB/s

4.2 14.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

985 3112

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3466C16-8GVR 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

Corsair CMK128GX4M4D3600C18 32GB

Corsair CMK128GX4M4D3600C18 32GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

Patriot Memory (PDP Systems) PSD48G26662 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK32GX4M4B3866C18 8GB

Corsair CMK32GX4M4B3866C18 8GB