Corsair CMSO4GX3M1C1600C11 4GB vs Corsair CMSO4GX3M1C1600C11 4GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 28
读取速度，GB/s

12.6 12.6
写入速度，GB/s

8.3 8.3
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2112 2112

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CWE 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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SK Hynix HMA81GR7AFR8N-UH 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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TwinMOS 8DPT5MK8-TATP 2GB

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