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Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
比较
Corsair CMSO4GX3M1C1600C11 4GB vs Corsair CMSO4GX3M1C1600C11 4GB
总分
Corsair CMSO4GX3M1C1600C11 4GB
总分
Corsair CMSO4GX3M1C1600C11 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB
报告一个错误
需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB
报告一个错误
规格
完整的技术规格清单
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
28
28
读取速度,GB/s
12.6
12.6
写入速度,GB/s
8.3
8.3
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2112
2112
Corsair CMSO4GX3M1C1600C11 4GB RAM的比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB RAM的比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Kingston KN2M64-ETB 8GB
Corsair CMK256GX4M8A2400C16 32GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
AMD R538G1601S2LS 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung M393A2K40BB0-CPB 16GB
Kingston 9905403-134.A00LF 2GB
Kingston 9905665-009.A00G 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
King Tiger Technology TMKU8G868-240U 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905734-062.A00G 32GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GS6AFR8N-UH 16GB
Team Group Inc. Team-Value-800 2GB
G Skill Intl F4-3200C16-8GTZSW 8GB
Kingston 99U5474-013.A00LF 2GB
Kingston 9905678-043.A00G 8GB
A-DATA Technology VDQVE1B16 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-4GIS 4GB
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Bug description
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