Corsair CMSO4GX3M1C1600C11 4GB vs Micron Technology 18ASF1G72PZ-2G1B1 8GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Micron Technology 18ASF1G72PZ-2G1B1 8GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 39% 更低的延时
更快的读取速度，GB/s

12.6 11

测试中的平均数值

Micron Technology 18ASF1G72PZ-2G1B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1B1 8GB

报告一个错误

更快的写入速度，GB/s

9.1 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Micron Technology 18ASF1G72PZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 46
读取速度，GB/s

12.6 11.0
写入速度，GB/s

8.3 9.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2112 2396

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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