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Corsair CMSO8GX3M1A1600C11 8GB
Corsair CMSO8GX3M1A1600C11 8GB
比较
Corsair CMSO8GX3M1A1600C11 8GB vs Corsair CMSO8GX3M1A1600C11 8GB
总分
Corsair CMSO8GX3M1A1600C11 8GB
总分
Corsair CMSO8GX3M1A1600C11 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMSO8GX3M1A1600C11 8GB
报告一个错误
需要考虑的原因
Corsair CMSO8GX3M1A1600C11 8GB
报告一个错误
规格
完整的技术规格清单
Corsair CMSO8GX3M1A1600C11 8GB
Corsair CMSO8GX3M1A1600C11 8GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
39
39
读取速度,GB/s
13.1
13.1
写入速度,GB/s
9.3
9.3
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 9 11
PC3-12800, 1.5V, CAS Supported: 6 7 9 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
2337
2337
Corsair CMSO8GX3M1A1600C11 8GB RAM的比较
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMSO8GX3M1A1600C11 8GB RAM的比较
SK Hynix HMT325S6BFR8C-H9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A4G43BB1-CWE 32GB
AMD R5S38G1601U2S 8GB
Gloway International (HK) STK2133C15-8GB 8GB
Kingston 99U5734-036.A00G 16GB
A-DATA Technology AX5U5200C3816G-B 16GB
Corsair CMV4GX3M1B1600C11 4GB
A-DATA Technology DDR4 3333 2OZ 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CMT32GX4M2D3600C18 16GB
Kingston KHX3200C18D4/8G 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK64GX4M2D3000C16 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C19-8GVRB 8GB
Samsung M378B5673EH1-CF8 2GB
AMD R744G2133U1S 4GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3400C16-8GTZKW 8GB
Corsair CMV4GX3M1B1600C11 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Kingston 9905471-071.A00LF 8GB
Kingston 9905702-400.A00G 8GB
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Bug description
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