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Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A3200C22 16GB
比较
Corsair CMSX32GX4M2A2666C18 16GB vs Corsair CMSX32GX4M2A3200C22 16GB
总分
Corsair CMSX32GX4M2A2666C18 16GB
总分
Corsair CMSX32GX4M2A3200C22 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMSX32GX4M2A2666C18 16GB
报告一个错误
低于PassMark测试中的延时,ns
38
41
左右 7% 更低的延时
需要考虑的原因
Corsair CMSX32GX4M2A3200C22 16GB
报告一个错误
更快的读取速度,GB/s
16.3
15.2
测试中的平均数值
更快的写入速度,GB/s
13.5
13.1
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2 更高的带宽
规格
完整的技术规格清单
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A3200C22 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
41
读取速度,GB/s
15.2
16.3
写入速度,GB/s
13.1
13.5
内存带宽,mbps
21300
25600
Other
描述
PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2892
3146
Corsair CMSX32GX4M2A2666C18 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
Corsair CMSX32GX4M2A3200C22 16GB RAM的比较
Samsung M471A4G43AB1-CWE 32GB
Kingston KHX4000C19D4/8GX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMX8GX3M2A1600C11 4GB
Crucial Technology CT8G4DFS8266.C8FN 8GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A3200C22 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK32GX4M2A2800C16 16GB
Samsung M378B5673EH1-CF8 2GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 8G2666CL19 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
Samsung M471B1G73EB0-YK0 8GB
Kingston 9965589-013.A00G 8GB
Mushkin 991988 (996988) 4GB
A-DATA Technology DDR4 2666 8GB
Samsung M393B5170FH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2D2666C16 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905700-012.A00G 8GB
报告一个错误
×
Bug description
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