Corsair CMSX4GX3M1A1600C9 4GB vs G Skill Intl F4-4133C19-8GTZC 8GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

G Skill Intl F4-4133C19-8GTZC 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZC 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 -65% 更低的延时
更快的读取速度，GB/s

19.3 12.8

测试中的平均数值
更快的写入速度，GB/s

16.7 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

G Skill Intl F4-4133C19-8GTZC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 23
读取速度，GB/s

12.8 19.3
写入速度，GB/s

9.1 16.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2099 4015

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4133C19-8GTZC 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Micron Technology 16KTF51264AZ-1G6K1 4GB

Micron Technology 16KTF51264AZ-1G6K1 4GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

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Samsung M391B5673EH1-CH9 2GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB