Corsair CMSX4GX3M1A1600C9 4GB vs Kingston 9905624-004.A00G 4GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

Kingston 9905624-004.A00G 4GB

需要考虑的原因
Kingston 9905624-004.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 38

左右 -65% 更低的延时
更快的读取速度，GB/s

16.3 12.8

测试中的平均数值
更快的写入速度，GB/s

12.0 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Kingston 9905624-004.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 23
读取速度，GB/s

12.8 16.3
写入速度，GB/s

9.1 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2099 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

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AMD R5316G1609U2K 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Kingston KHX2400C15/8G 8GB

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G Skill Intl F4-3200C16-16GVK 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston K6VDX7-HYD 8GB

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Kingston 9905584-016.A00LF 4GB

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Kingston XJV223-MIE-NX 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Patriot Memory (PDP Systems) PSD48G24002 8GB

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