Corsair CMSX4GX3M1A1600C9 4GB vs Micron Technology 8ATF1G64AZ-2G6H1 8GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G6H1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6H1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

16.2 12.8

测试中的平均数值
更快的写入速度，GB/s

13.1 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

12.8 16.2
写入速度，GB/s

9.1 13.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2099 3020

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

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Apacer Technology GD2.1831WS.001 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB