Corsair CMSX4GX3M1A1600C9 4GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 53

左右 28% 更低的延时
更快的读取速度，GB/s

12.8 10.1

测试中的平均数值
更快的写入速度，GB/s

9.1 8.0

测试中的平均数值

Micron Technology 9ASF51272PZ-2G3B1 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 53
读取速度，GB/s

12.8 10.1
写入速度，GB/s

9.1 8.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2099 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X8GD3600C18K2D 8GB

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Corsair CML16GX3M2A1600C10 8GB

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Crucial Technology BLE8G4D26AFEA.16FBD 8GB

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Mushkin MR[A/B]4U266GHHF8G 8GB

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Samsung M471B5173QH0-YK0 4GB

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Super Talent F3200UA8G 8GB

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G Skill Intl F4-2400C14-16GVK 16GB

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Mushkin MR[ABC]4U320GJJM16G 16GB

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AMD AE34G1601U1 4GB

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G Skill Intl F4-3600C17-4GVK 4GB

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Kingston KVR800D2N6/2G 2GB

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Avant Technology J641GU42J9266NL 8GB

Avant Technology J641GU42J9266NL 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMU32GX4M2D3200C16 16GB

Corsair CMU32GX4M2D3200C16 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Crucial Technology CT8G4DFD824A.M16FF 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Hewlett-Packard 7EH68AA# 16GB

Hewlett-Packard 7EH68AA# 16GB