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Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CB16GU2666.C8ET 16GB

Corsair CMV4GX3M1B1600C11 4GB vs Crucial Technology CB16GU2666.C8ET 16GB

总分
star star star star star
Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

总分
star star star star star
Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

差异 规格 评论

差异

Corsair CMV4GX3M1B1600C11 4GB 需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 37
    左右 32% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 13.6
    测试中的平均数值
Crucial Technology CB16GU2666.C8ET 16GB 需要考虑的原因
Crucial Technology CB16GU2666.C8ET 16GB
报告一个错误
  • 更快的写入速度，GB/s
    9.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CB16GU2666.C8ET 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 37
  • 读取速度，GB/s
    14.2 left arrow 13.6
  • 写入速度，GB/s
    8.1 left arrow 9.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2307 left arrow 2722

Corsair CMV4GX3M1B1600C11 4GB RAM的比较

Corsair CMV4GX3M1A1600C11 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Crucial Technology CB16GU2666.C8ET 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Corsair CMV4GX3M1B1600C11 4GB
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Crucial Technology CB16GU2666.C8ET 16GB
Crucial Technology CB16GU2666.C8ET 16GB
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内存RAM
Samsung M378B5173BH0-CH9 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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Kingston MSI24D4D4S8MB-8 8GB
内存RAM