Corsair CMX32GX3M4A1600C11 8GB vs Chun Well Technology Holding Limited D4U0832160B 8GB

总分

Corsair CMX32GX3M4A1600C11 8GB

Corsair CMX32GX3M4A1600C11 8GB

总分

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

差异规格评论

差异

Corsair CMX32GX3M4A1600C11 8GB

需要考虑的原因
Corsair CMX32GX3M4A1600C11 8GB

报告一个错误

Chun Well Technology Holding Limited D4U0832160B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

20.5 13.2

测试中的平均数值
更快的写入速度，GB/s

14.5 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX32GX3M4A1600C11 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

13.2 20.5
写入速度，GB/s

8.3 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2348 3379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4DFD8213.C16FDD 16GB

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-4400C16-8GTRS 8GB

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Kingston KN2M64-ETB 8GB

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SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB