Corsair CMX4GX3M1A1333C9 4GB vs Panram International Corporation W4N2666PS-8G 8GB

总分

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

差异规格评论

差异

Corsair CMX4GX3M1A1333C9 4GB

需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB

报告一个错误

Panram International Corporation W4N2666PS-8G 8GB

需要考虑的原因
Panram International Corporation W4N2666PS-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 40

左右 -100% 更低的延时
更快的读取速度，GB/s

17.9 12.8

测试中的平均数值
更快的写入速度，GB/s

14.3 7.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M1A1333C9 4GB

Panram International Corporation W4N2666PS-8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 20
读取速度，GB/s

12.8 17.9
写入速度，GB/s

7.0 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2021 3127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2800C15-4GVR 4GB

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Corsair CMX4GX3M1A1333C9 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Samsung M393A2K43BB1-CPB 16GB

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GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB