Corsair CMX4GX3M2A1600C9 2GB vs Corsair CMW8GX4M1Z3200C16 8GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

Corsair CMW8GX4M1Z3200C16 8GB

需要考虑的原因
Corsair CMW8GX4M1Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

17.3 13.9

测试中的平均数值
更快的写入速度，GB/s

15.3 8.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMW8GX4M1Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

13.9 17.3
写入速度，GB/s

8.7 15.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2106 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M2A1600C9 2GB

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Samsung M471A4G43AB1-CWE 32GB

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Samsung M471B5173QH0-YK0 4GB

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

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A-DATA Technology DDR4 2400 16GB

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Kingston 99U5584-005.A00LF 4GB

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Samsung M471A1K43BB1-CTD 8GB