Corsair CMX4GX3M2A1600C9 2GB vs Smart Modular SF4641G8CK8IEHLSBG 8GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

Smart Modular SF4641G8CK8IEHLSBG 8GB

需要考虑的原因
Smart Modular SF4641G8CK8IEHLSBG 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 38

左右 -6% 更低的延时
更快的读取速度，GB/s

14.8 13.9

测试中的平均数值
更快的写入速度，GB/s

10.4 8.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 36
读取速度，GB/s

13.9 14.8
写入速度，GB/s

8.7 10.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2106 2515

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Kingston 9905630-051.A00G 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Crucial Technology BL8G36C16U4B.M8FE1 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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G Skill Intl F4-3000C16-8GISB 8GB

G Skill Intl F4-3000C16-8GISB 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Crucial Technology BLM8G44C19U4BL.M8FE1 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB