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Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G36S818BN 8GB

Samsung M378B5673EH1-CF8 2GB vs V-Color Technology Inc. TA48G36S818BN 8GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 57
    左右 51% 更低的延时
V-Color Technology Inc. TA48G36S818BN 8GB 需要考虑的原因
V-Color Technology Inc. TA48G36S818BN 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.1 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G36S818BN 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 57
  • 读取速度，GB/s
    12.7 left arrow 20.1
  • 写入速度，GB/s
    7.5 left arrow 9.8
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2328

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

V-Color Technology Inc. TA48G36S818BN 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3200C15-16GTZKY 16GB
G Skill Intl F4-3200C15-16GTZKY 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Corsair CMT32GX4M2C3600C18 16GB
Corsair CMT32GX4M2C3600C18 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 78.C1GMW.AZC0B 8GB
Apacer Technology 78.C1GMW.AZC0B 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMK64GX4M4A2666C16 16GB
Corsair CMK64GX4M4A2666C16 16GB
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Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
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Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
Samsung M393B5170GB0-CK0 4GB
Samsung M393B5170GB0-CK0 4GB
Kingston ASU21D4U5S8MB-8 8GB
Kingston ASU21D4U5S8MB-8 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMD32GX4M4B2400C10 8GB
Corsair CMD32GX4M4B2400C10 8GB
内存RAM