Corsair CMX8GX3M2A1600C11 4GB vs Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

总分

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

总分

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

差异规格评论

差异

Corsair CMX8GX3M2A1600C11 4GB

需要考虑的原因
Corsair CMX8GX3M2A1600C11 4GB

报告一个错误

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 -30% 更低的延时
更快的读取速度，GB/s

16.4 12.1

测试中的平均数值
更快的写入速度，GB/s

13.4 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A1600C11 4GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 30
读取速度，GB/s

12.1 16.4
写入速度，GB/s

9.8 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2453 3188

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX5M2B5600C36 16GB

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A-DATA Technology VDQVE1B16 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Ramaxel Technology RMUA5110MB78HAF-2400 8GB

Ramaxel Technology RMUA5110MB78HAF-2400 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK32GX4M2K4133C19 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Corsair CMK128GX4M8B3000C16 16GB

Corsair CMK128GX4M8B3000C16 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB