Corsair CMX8GX3M2A2000C9 4GB vs Corsair CMD16GX4M2B2400C10 8GB

总分

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

总分

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

差异规格评论

差异

Corsair CMX8GX3M2A2000C9 4GB

需要考虑的原因
Corsair CMX8GX3M2A2000C9 4GB

报告一个错误

Corsair CMD16GX4M2B2400C10 8GB

需要考虑的原因
Corsair CMD16GX4M2B2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

18.2 14.3

测试中的平均数值
更快的写入速度，GB/s

14.0 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMD16GX4M2B2400C10 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

14.3 18.2
写入速度，GB/s

9.4 14.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2479 3538

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-2400C15-8GIS 8GB

G Skill Intl F4-2400C15-8GIS 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 99U5711-001.A00G 4GB

Kingston 99U5711-001.A00G 4GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Patriot Memory (PDP Systems) PSD38G16002 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

INTENSO GKE800UD102408-2133 8GB

INTENSO GKE800UD102408-2133 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB