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Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2400C15-8GIS 8GB

Essencore Limited KD48GU88C-26N1600 8GB vs G Skill Intl F4-2400C15-8GIS 8GB

总分
star star star star star
Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分
star star star star star
G Skill Intl F4-2400C15-8GIS 8GB

G Skill Intl F4-2400C15-8GIS 8GB

差异 规格 评论

差异

Essencore Limited KD48GU88C-26N1600 8GB 需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 33
    左右 45% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.4 left arrow 11.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
G Skill Intl F4-2400C15-8GIS 8GB 需要考虑的原因
G Skill Intl F4-2400C15-8GIS 8GB
报告一个错误

规格

完整的技术规格清单
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2400C15-8GIS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 33
  • 读取速度，GB/s
    20.5 left arrow 15.6
  • 写入速度，GB/s
    16.4 left arrow 11.1
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3530 left arrow 2823

Essencore Limited KD48GU88C-26N1600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2400C15-8GIS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Nanya Technology NT4GC64B8HG0NS-DI 4GB
内存RAM
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Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-2133C15-4GNT 4GB
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内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Avant Technology J642GU42J5213NF 16GB
Avant Technology J642GU42J5213NF 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
Crucial Technology BLS16G4S240FSD.16FD 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X16GC3600C18K2D 16GB
Corsair CM4X16GC3600C18K2D 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston ACR32D4U2S1ME-8 8GB
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内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Corsair CMK32GX4M2K4133C19 16GB
Corsair CMK32GX4M2K4133C19 16GB
内存RAM
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2G43MX3-CTD 16GB
Samsung M378A2G43MX3-CTD 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston KHX2133C14/8G 8GB
Kingston KHX2133C14/8G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X4GF2400C14K4 4GB
Corsair CM4X4GF2400C14K4 4GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
内存RAM