Hexon Technology Pte Ltd HEXON 1GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 12.5

测试中的平均数值

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

报告一个错误

低于PassMark测试中的延时，ns

50 62

左右 -24% 更低的延时
更快的写入速度，GB/s

7.3 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 50
读取速度，GB/s

3,556.6 12.5
写入速度，GB/s

1,843.6 7.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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