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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
50
左右 42% 更低的延时
更快的读取速度,GB/s
16.9
12.5
测试中的平均数值
更快的写入速度,GB/s
12.0
7.3
测试中的平均数值
需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
50
读取速度,GB/s
16.9
12.5
写入速度,GB/s
12.0
7.3
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2601
2326
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M386B4G70DM0-CMA4 32GB
Corsair CMW16GX4M2C3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A4G43BB1-CWE 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905702-137.A00G 8GB
报告一个错误
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Bug description
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