Samsung M378B5673FH0-CH9 2GB vs G Skill Intl F4-3600C18-16GTZN 16GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

G Skill Intl F4-3600C18-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3600C18-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 35

左右 -17% 更低的延时
更快的读取速度，GB/s

17.7 14.4

测试中的平均数值
更快的写入速度，GB/s

14.8 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-3600C18-16GTZN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 30
读取速度，GB/s

14.4 17.7
写入速度，GB/s

9.5 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Team Group Inc. TEAMGROUP-SD4-2666 16GB

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PNY Electronics PNY 2GB

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Apacer Technology 78.C1GM3.C7W0B 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMK16GX4M2Z2400C16 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Apacer Technology 78.C1GS7.DFW0C 8GB

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Samsung M471B1G73DB0-YK0 8GB

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G Skill Intl F4-4000C17-16GVKB 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMWX8GF2933Z16W4 8GB

Corsair CMWX8GF2933Z16W4 8GB

Samsung M4 70T2953EZ3-CE6 1GB

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G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Kingston ACR26D4S9D8MD-16 16GB

Kingston ACR26D4S9D8MD-16 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C16-8GTZRN 8GB

G Skill Intl F4-3200C16-8GTZRN 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905624-022.A00G 8GB

Kingston 9905624-022.A00G 8GB

Samsung M393B5270CH0-CH9 4GB

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Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB