Samsung M393B5270CH0-CH9 4GB vs Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

17.3 10.6

测试中的平均数值
更快的写入速度，GB/s

14.3 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

10.6 17.3
写入速度，GB/s

9.0 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2423 3208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4SFS824A.M8FE 4GB

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Crucial Technology CT102464BF160B.C16 8GB

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Corsair CMU32GX4M4D3000C16 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Crucial Technology BLT8G4D30BET4K.C8FD 8GB

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Micron Technology 36ASF2G72PZ-2G1A2 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston ACR26D4S9S8KA-8 8GB

Kingston ACR26D4S9S8KA-8 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB