Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Gold Key Technology Co Ltd NMUD480E86-3200 8GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 -4% 更低的延时
更快的读取速度，GB/s

19.5 11.7

测试中的平均数值
更快的写入速度，GB/s

15.0 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 27
读取速度，GB/s

11.7 19.5
写入速度，GB/s

8.4 15.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1578 3631

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Corsair CMD32GX4M4C3200C16 8GB

Corsair CMD32GX4M4C3200C16 8GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston ACR24D4S7D8MB-16 16GB

Kingston ACR24D4S7D8MB-16 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB

Crucial Technology BLS8G4D26BFSBK.8FD 8GB