Corsair CMX8GX3M2A2000C9 4GB vs G Skill Intl F4-3000C15-8GVGB 8GB

总分

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

总分

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

差异规格评论

差异

Corsair CMX8GX3M2A2000C9 4GB

需要考虑的原因
Corsair CMX8GX3M2A2000C9 4GB

报告一个错误

G Skill Intl F4-3000C15-8GVGB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVGB 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

17.9 14.3

测试中的平均数值
更快的写入速度，GB/s

14.0 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Corsair CMX8GX3M2A2000C9 4GB

G Skill Intl F4-3000C15-8GVGB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

14.3 17.9
写入速度，GB/s

9.4 14.0
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2479 3391

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905678-044.A00G 8GB

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Crucial Technology CT102464BF160B.C16 8GB

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Corsair CMD32GX4M2C3200C16 16GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Kingston KF3733C19D4/16GX 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB