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Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
比较
Corsair CMY16GX3M4A2133C8 4GB vs Crucial Technology BLS8G4S26BFSD.16FD2 8GB
总分
Corsair CMY16GX3M4A2133C8 4GB
总分
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB
报告一个错误
低于PassMark测试中的延时,ns
20
25
左右 20% 更低的延时
更快的读取速度,GB/s
17
14.9
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
20
25
读取速度,GB/s
17.0
14.9
写入速度,GB/s
11.5
11.5
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3077
2466
Corsair CMY16GX3M4A2133C8 4GB RAM的比较
Kingston KHX2800C12D3/4GX 4GB
Corsair CMK8GX4M2A2133C13 4GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M378A1G43DB0-CPB 8GB
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SK Hynix HYMP112U64CP8-S5 1GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Team Group Inc. Team-Elite-1333 4GB
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Samsung M393B1G70BH0-CK0 8GB
Kingston 9905702-400.A00G 8GB
Kingston 9905403-444.A00LF 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
SK Hynix HMT451U7BFR8C-RD 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Kingston 9905471-006.A01LF 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Samsung M471B5273EB0-CK0 4GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M471B5173QH0-YK0 4GB
Kingston KGTWW1-MIE 4GB
报告一个错误
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Bug description
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