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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Micron Technology 8ATF1G64HZ-2G2G1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Micron Technology 8ATF1G64HZ-2G2G1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
14.3
测试中的平均数值
需要考虑的原因
Micron Technology 8ATF1G64HZ-2G2G1 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
65
左右 -171% 更低的延时
更快的写入速度,GB/s
6.9
1,592.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
24
读取速度,GB/s
3,580.8
14.3
写入速度,GB/s
1,592.0
6.9
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
572
2191
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Samsung M393B1G70BH0-YK0 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
AMD R5S38G1601U2S 8GB
Kingston KWTHG4-MIE 16GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology CB16GS2666.C8ET 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston KHX2400C1C14/16G 16GB
Samsung M471B5173DB0-YK0 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Corsair CM3X8GA2400C11Y2R 8GB
Samsung M378A1K43CB2-CRC 8GB
Kingston 9905471-006.A01LF 4GB
Samsung M393A2K40CB2-CTD 16GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX3200C16D4/16GX 16GB
Samsung M391B5673EH1-CH9 2GB
Team Group Inc. DDR4 2800 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A5244CB0-CWE 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
报告一个错误
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