Corsair CMY16GX3M4A2133C8 4GB vs Kllisre M378A1K43BB2-CRC 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Kllisre M378A1K43BB2-CRC 8GB

Kllisre M378A1K43BB2-CRC 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 48

左右 58% 更低的延时
更快的读取速度，GB/s

17 11

测试中的平均数值
更快的写入速度，GB/s

11.5 7.7

测试中的平均数值

Kllisre M378A1K43BB2-CRC 8GB

需要考虑的原因
Kllisre M378A1K43BB2-CRC 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Kllisre M378A1K43BB2-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 48
读取速度，GB/s

17.0 11.0
写入速度，GB/s

11.5 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3077 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D30CEST.16FD 16GB

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Samsung M393B5170FH0-CK0 4GB

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Kingston 9905744-005.A00G 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Teikon TMA451S6AFR8N-TFSC 4GB

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Samsung M393A1G40DB0-CPB 8GB

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Kingston KF3200C16D4/16GX 16GB

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Asgard VMA45UH-MEC1U2AW2 16GB

Asgard VMA45UH-MEC1U2AW2 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-2133C15-4GIS 4GB

G Skill Intl F4-2133C15-4GIS 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB