Corsair CMY16GX3M4A2133C8 4GB vs Samsung M393A8K40B21-CTC 64GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Samsung M393A8K40B21-CTC 64GB

Samsung M393A8K40B21-CTC 64GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 39

左右 49% 更低的延时
更快的读取速度，GB/s

17 8.9

测试中的平均数值
更快的写入速度，GB/s

11.5 6.8

测试中的平均数值

Samsung M393A8K40B21-CTC 64GB

需要考虑的原因
Samsung M393A8K40B21-CTC 64GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Samsung M393A8K40B21-CTC 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 39
读取速度，GB/s

17.0 8.9
写入速度，GB/s

11.5 6.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3077 2011

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CB8GU2666.C8ET 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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G Skill Intl F4-3600C19-16GTRG 16GB

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Patriot Memory (PDP Systems) PSD44G240041 4GB

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G Skill Intl F4-3000C16-16GVRB 16GB

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Corsair CM2X1024-8500C5D 1GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

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Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB