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Corsair CMY16GX3M4A2133C8 4GB
Samsung M393A8K40B21-CTC 64GB

Corsair CMY16GX3M4A2133C8 4GB vs Samsung M393A8K40B21-CTC 64GB

总分
star star star star star
Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分
star star star star star
Samsung M393A8K40B21-CTC 64GB

Samsung M393A8K40B21-CTC 64GB

差异 规格 评论

差异

Corsair CMY16GX3M4A2133C8 4GB 需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 39
    左右 49% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 6.8
    测试中的平均数值
Samsung M393A8K40B21-CTC 64GB 需要考虑的原因
Samsung M393A8K40B21-CTC 64GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMY16GX3M4A2133C8 4GB
Samsung M393A8K40B21-CTC 64GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 39
  • 读取速度，GB/s
    17.0 left arrow 8.9
  • 写入速度，GB/s
    11.5 left arrow 6.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3077 left arrow 2011

Corsair CMY16GX3M4A2133C8 4GB RAM的比较

Kingston KHX2800C12D3/4GX 4GB
Corsair CMK8GX4M2A2133C13 4GB

Samsung M393A8K40B21-CTC 64GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Kingston KVR533D2N4 512MB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393A1G43DB0-CPB 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
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Samsung M393A1G43EB1-CRC 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Corsair CM4B16G2L2666A18K2 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
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G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Samsung M393A8K40B21-CTC 64GB
Samsung M393A8K40B21-CTC 64GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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SK Hynix HMA84GR7AFR4N-VK 32GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM