RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Corsair CMY8GX3M2A2666C10 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB

Corsair CMY8GX3M2A2666C10 4GB vs Chun Well Technology Holding Limited D4U1636144B 16GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 26
    左右 35% 更低的延时
Chun Well Technology Holding Limited D4U1636144B 16GB 需要考虑的原因
Chun Well Technology Holding Limited D4U1636144B 16GB
报告一个错误
  • 更快的读取速度，GB/s
    23.7 left arrow 22.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.3 left arrow 15.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 26
  • 读取速度，GB/s
    22.8 left arrow 23.7
  • 写入速度，GB/s
    15.4 left arrow 18.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 4124

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Chun Well Technology Holding Limited D4U1636144B 16GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Samsung M471A1G43DB0-CPB 8GB
Samsung M471A1G43DB0-CPB 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 9905701-020.A00G 16GB
Kingston 9905701-020.A00G 16GB
内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Kingston 9905734-073.A00G 16GB
Kingston 9905734-073.A00G 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AE4S240038G17-BHYA 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMK32GX4M4C3333C16 8GB
Corsair CMK32GX4M4C3333C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
内存RAM
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston XK2M26-MIE-NX 16GB
Kingston XK2M26-MIE-NX 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
内存RAM
Corsair CMSX16GX4M1A2400C16 16GB
Corsair CMSX16GX4M1A2400C16 16GB
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMG32GX4M2E3200C16 16GB
内存RAM