Corsair CMY8GX3M2A2666C10 4GB vs Corsair CMW128GX4M4D3600C18 32GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Corsair CMW128GX4M4D3600C18 32GB

Corsair CMW128GX4M4D3600C18 32GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 35

左右 51% 更低的延时
更快的读取速度，GB/s

22.8 16.5

测试中的平均数值
更快的写入速度，GB/s

15.4 14.7

测试中的平均数值

Corsair CMW128GX4M4D3600C18 32GB

需要考虑的原因
Corsair CMW128GX4M4D3600C18 32GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMW128GX4M4D3600C18 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 35
读取速度，GB/s

22.8 16.5
写入速度，GB/s

15.4 14.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 3534

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CMK32GX4M4B3200C16 8GB

Corsair CMK32GX4M4B3200C16 8GB