Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology BL16G32C16U4RL.M8FB1 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 28

左右 39% 更低的延时
更快的读取速度，GB/s

22.8 19.9

测试中的平均数值
更快的写入速度，GB/s

15.4 15.1

测试中的平均数值

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4RL.M8FB1 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 28
读取速度，GB/s

22.8 19.9
写入速度，GB/s

15.4 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 3785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CM4X4GF3000C15K4 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3200C16-16GTZKO 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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Crucial Technology BL8G32C16U4W.M8FE 8GB

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takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Crucial Technology CT8G4DFS824A.C8FAD1 8GB