Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 26

左右 35% 更低的延时
更快的读取速度，GB/s

22.8 18.4

测试中的平均数值
更快的写入速度，GB/s

15.4 14.1

测试中的平均数值

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

需要考虑的原因
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 26
读取速度，GB/s

22.8 18.4
写入速度，GB/s

15.4 14.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 3500

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5270CH0-CH9 4GB

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Apacer Technology 78.C1GMS.C7Z0C 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Kingston CBD26D4S9D8ME-16 16GB

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Micron Technology 16ATF4G64HZ-2G6B2 32GB

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A-DATA Technology DQVE1908 512MB

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A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F4-2400C15-16GFX 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Apacer Technology D22.23263S.002 16GB

Apacer Technology D22.23263S.002 16GB

Corsair CMZ16GX3M2A2400C10 8GB

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Kingston 9905598-006.A00G 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

Ramaxel Technology RMSA3330MJ78HBF-3200 16GB