Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 26

左右 35% 更低的延时
更快的读取速度，GB/s

22.8 18.8

测试中的平均数值

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

需要考虑的原因
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

报告一个错误

更快的写入速度，GB/s

15.6 15.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 26
读取速度，GB/s

22.8 18.8
写入速度，GB/s

15.4 15.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3391 3733

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-32GTZN 32GB

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Corsair CMY8GX3M2A2666C10 4GB

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Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

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Kingston 9905678-006.A00G 4GB

A-DATA Technology DOVF1B163G2G 2GB

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Crucial Technology BLS16G4D240FSB.16FBD 16GB

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G Skill Intl F4-4000C14-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-2666C15-8GVS 8GB

G Skill Intl F4-2666C15-8GVS 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

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G Skill Intl F4-3200C16-8GTZKW 8GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB