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Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4DFD8266.C16FN 16GB

Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology CT16G4DFD8266.C16FN 16GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Crucial Technology CT16G4DFD8266.C16FN 16GB

Crucial Technology CT16G4DFD8266.C16FN 16GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 32
    左右 47% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 13.0
    测试中的平均数值
Crucial Technology CT16G4DFD8266.C16FN 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FN 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 32
  • 读取速度，GB/s
    22.8 left arrow 16.4
  • 写入速度，GB/s
    15.4 left arrow 13.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 3278

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT16G4DFD8266.C16FN 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Corsair CMY8GX3M2A2666C10 4GB
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Crucial Technology CT16G4DFD8266.C16FN 16GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
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内存RAM
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G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM
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内存RAM
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内存RAM
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SK Hynix HYMP125S64CP8-S6 2GB
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Samsung M393A4K40BB0-CPB 32GB
内存RAM
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SK Hynix DDR2 800 2G 2GB
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