Samsung M391B5673EH1-CH9 2GB vs Ramaxel Technology RMUA5110MD78HAF-2666 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时
更快的写入速度，GB/s

9.0 8.9

测试中的平均数值

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

需要考虑的原因
Ramaxel Technology RMUA5110MD78HAF-2666 8GB

报告一个错误

更快的读取速度，GB/s

15.2 12.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

12.8 15.2
写入速度，GB/s

9.0 8.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 2430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5584-004.A00LF 4GB

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Corsair CMR16GX4M2E4266C19 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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G Skill Intl F4-2133C15-8GRK 8GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3200C16-8GVK 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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DSL Memory CIR-W4SUSS2408G 8GB

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Kingston 9905403-011.A03LF 2GB

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Kingston 9905598-044.A00G 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Crucial Technology CT4G4DFS824A.M8FB 4GB

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Kingston KYXC0V-MIB 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kllisre 99P54280002.A00LF 8GB

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