Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology CT16G4DFD8266.M16FD 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 29

左右 41% 更低的延时
更快的读取速度，GB/s

22.8 17.6

测试中的平均数值
更快的写入速度，GB/s

15.4 13.7

测试中的平均数值

Crucial Technology CT16G4DFD8266.M16FD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FD 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 29
读取速度，GB/s

22.8 17.6
写入速度，GB/s

15.4 13.7
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3391 3432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Essencore Limited KD48GU88C-26N190A 8GB

Essencore Limited KD48GU88C-26N190A 8GB

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Kingston HP37D4U1S8ME-16XR 16GB