Crucial Technology CT51264BD160B.C16F 4GB vs Kingston HP37D4U1S8ME-16XR 16GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Kingston HP37D4U1S8ME-16XR 16GB

需要考虑的原因
Kingston HP37D4U1S8ME-16XR 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 41

左右 -21% 更低的延时
更快的读取速度，GB/s

19.2 13.9

测试中的平均数值
更快的写入速度，GB/s

14.9 9.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Kingston HP37D4U1S8ME-16XR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 34
读取速度，GB/s

13.9 19.2
写入速度，GB/s

9.7 14.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2366 3527

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Essencore Limited KD4AGS88C-26N1900 16GB

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SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

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Kingston 99U5584-004.A00LF 4GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

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