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Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3600C14-16GTZR 16GB
比较
Crucial Technology CT51264BD160B.C16F 4GB vs G Skill Intl F4-3600C14-16GTZR 16GB
总分
Crucial Technology CT51264BD160B.C16F 4GB
总分
G Skill Intl F4-3600C14-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C14-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
41
左右 -64% 更低的延时
更快的读取速度,GB/s
25.6
13.9
测试中的平均数值
更快的写入速度,GB/s
20.7
9.7
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3600C14-16GTZR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
25
读取速度,GB/s
13.9
25.6
写入速度,GB/s
9.7
20.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2366
4537
Crucial Technology CT51264BD160B.C16F 4GB RAM的比较
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
G Skill Intl F4-3600C14-16GTZR 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CM4X16GC3000C15D4 16GB
Crucial Technology CT102464BA160B.M16 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M4 70T5663CZ3-CE6 2GB
SK Hynix HMA851U6DJR6N-XN 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CMT64GX4M8C3200C16 8GB
Kingston 9905403-437.A01LF 4GB
Corsair CMSX16GX4M2A2666C18 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905598-025.A00G 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Crucial Technology CT25664AA800.M16FM 2GB
SK Hynix HMA851U6CJR6N-VK 4GB
Samsung 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston KHX3466C19D4/8G 8GB
报告一个错误
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Bug description
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