Crucial Technology BLT2G3D1608DT1TX0 2GB vs Kingston 9905598-025.A00G 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 8% 更低的延时
更快的读取速度，GB/s

13.6 13.4

测试中的平均数值
更快的写入速度，GB/s

9.4 6.8

测试中的平均数值

Kingston 9905598-025.A00G 8GB

需要考虑的原因
Kingston 9905598-025.A00G 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Kingston 9905598-025.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 25
读取速度，GB/s

13.6 13.4
写入速度，GB/s

9.4 6.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 2045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF2G72PZ-2G1B1 16GB

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SK Hynix HMA851U6CJR6N-VK 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Samsung M471B5173QH0-YK0 4GB

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Kingmax Semiconductor GSAG42F-18---------- 8GB

Nanya Technology M2S4G64CB8HG5N-CG 4GB

Nanya Technology M2S4G64CB8HG5N-CG 4GB

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Micron Technology 16GB 2133MHz DIMM 16GB

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Crucial Technology CT51264BF160BJ.C8F 4GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB