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Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT51264BF160B.C16F 4GB

Corsair CMY8GX3M2A2666C10 4GB vs Crucial Technology CT51264BF160B.C16F 4GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
Crucial Technology CT51264BF160B.C16F 4GB

Crucial Technology CT51264BF160B.C16F 4GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 42
    左右 60% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 9.0
    测试中的平均数值
Crucial Technology CT51264BF160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.C16F 4GB
报告一个错误
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT51264BF160B.C16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    17 left arrow 42
  • 读取速度，GB/s
    22.8 left arrow 12.8
  • 写入速度，GB/s
    15.4 left arrow 9.0
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2011

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT51264BF160B.C16F 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5173QH0-YK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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