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Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB

Corsair CMY8GX3M2A2666C10 4GB vs G Skill Intl F3-12800CL7-4GBXM 4GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 36
    左右 53% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 8.7
    测试中的平均数值
G Skill Intl F3-12800CL7-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-12800CL7-4GBXM 4GB
报告一个错误

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    17 left arrow 36
  • 读取速度，GB/s
    22.8 left arrow 14.8
  • 写入速度，GB/s
    15.4 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2481

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB RAM的比较

G Skill Intl F3-19200CL9-4GBZMD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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Essencore Limited IM48GU48N21-FFFHM 8GB
内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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内存RAM
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Kingston KHX1600C9D3/8G 8GB
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Samsung M471A2K43BB1-CRC 16GB
内存RAM